The gain of the 2sc3281r will be in the range from 55. Elektronische bauelemente npn plastic encapsulated transistor. Inchange semiconductorproduct specificationsilicon npn power transistors2sc3281description. Show content of filename 2sc3281 toshiba datasheet 1023. Storage temperature range tstg 55 150 c characteristic symbol test condition min. Medium voltage npn fastswitching darlington tra, technical literature, 5129, product development, specification, datasheet, bu806, bu807 created date 20031029151519. The 2sc3281 transistor might have a current gain anywhere between 55 and 160. Savantic semiconductor product specification silicon npn power transistors 2sc3281 description with to3pl package complement to type 2sa2 applications power amplifier applications. Inchange semiconductor isc product specification isc silicon pnp power transistor 2sa2 electrical characteristics t c25.
Mospec, alldatasheet, datasheet, datasheet search site for electronic. Ne85630 2sc4226 data sheet npn silicon rf transistor npn epitaxial silicon rf transistor for highfrequency lownoise amplification 3pin super minimold description the ne85630 2sc4226 is a low supply voltage transistor designed for vhf, uhf low noise amplifier. Ib0 200 v vcesat collectoremitter saturation voltage ic8a. Power transistors15a,200v,150w, 2sc3281 datasheet, 2sc3281 circuit, 2sc3281 data sheet. Unit dc current gain at i c2ma, v ce5v current gain group q r s h fe h fe h fe 180 260 280 360 520 collector base breakdown voltage at i c10a st 2sc828 st 2sc828a v brcbo v brcbo 30 45 v v collector emitter breakdown voltage at i c2ma st. Here is an image showing the pin diagram of the this transistor. Toshiba transistor silicon npn epitaxial type pct process. Toshiba transistor silicon npn epitaxial type pct process 2sc2240 low noise audio amplifier applications the 2sc2240 is a transistor for low frequency and low noise applications. Toshiba transistor silicon pnp epitaxial type 2sa1837. Trans npn 200v 15a 221f1a online from elcodis, view and download 2sc3281o pdf datasheet, transistors bjt single specifications. Unit test conditions collector to base breakdown voltage vbrcbo 30 v ic1ma, i e0 collector to emitter breakdown voltage vbrceo 10 v ic10ma, i b0.
Storage temperature vcbo vceo vebo ic pc tj tstg 200 200 6 15 150 150. Show content of filename 2sc3281toshibadatasheet1023. High power dissipation datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. Silicon npn power transistors 2sc3858 description with mt200 package complement to type 2sa1494 applications audio and general purpose pinningsee fig. Storage time fall time ic 5 a vcc 100 v ib1 50 ma ib2 500 ma 0. Specification, datasheet, tip35c, tip36c created date. Description npn planar silicon transistoraudio power amplifier dc to dc converter. Storage temperature range tstg 55150 ac eiaj a toshiba 221f1a electrical. Max unit collector cutoff current i cbo vcb 150 v, ie 0. Complementary power transistors stmicroelectronics. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. Unit collector cutoff current icbo vcb 200v, ie 0 5.
Technical literature, 5129, product development, specification, datasheet, bu806, bu807 created date. Trans npn 200v 15a 221f1a online from elcodis, view and download 2sc3281 o pdf datasheet, transistors bjt single specifications. Jmnic product specification silicon npn power transistors 2sc789 description with to220c package low collector saturation voltage applications for medium power linear and switching applications pinning pin description 1 base collector. Bu2525af datasheet pdf buaf transistor datasheet pdf, buaf equivalent. Elektronische bauelemente npn plastic encapsulated. Toshiba transistor silicon npn triple diffused type 2sc5200.
Max unit collector cutoff current i cbo vcb 240 v, ie 0. A, ie0 collector to emitter breakdown voltage vbrceo 25 v ic10ma, ib0. Replacement and equivalent transistor for the 2sc3281 you can replace the 2sc3281 with the 2sc3320, 2sc5200, 2sc5200n, 2sc5242, 2sc5358, 2sc5949, 2sc6011, 2sc6011a, 2sc6011ao, 2sc6011ap, 2sc6011ay, 2sd, fja43, fjl4315, ktc5200, ktc5200a, ktc5242, ktc5242a. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min. Darlington complementary silicon power transistors this series of plastic, medium. Ztx694b silicon planar medium power high gain transistor. Savantic semiconductor product specification 2 silicon npn power transistors 2sc3281 characteristics tj25 unless otherwise specified symbol parameter conditions min typ.
Stmicroelectronics preferred obsolete products obsolete. Audio and general purpose symbol v cbo vceo vebo ic ib pc tj tstg ratings 230 230 5 17 5 200tc25c. Tip3055d tip3055 npn, tip2955 pnp complementary silicon power transistors designed for general. V brceo 200vmin complement to type 2sc3281 applications power amplifier applications recommend for 100w high fidelity audio frequency amplifier output stage applications. St 2sc828 828a characteristics at t amb25 oc symbol min. Mospec power transistors15a,200v,150w,alldatasheet, datasheet, datasheet search site for. Max unit vbrceo collectoremitter breakdown voltage ic50ma.
Max unit collector cutoff current i cbo vcb 230 v, ie 0. Junction, storage temperature tj, t stg 150, 55150 c electrical characteristics t a 25c unless otherwise specified parameter symbol min. The complementary pnp transistor to the 2sc3281 is the 2sa2. Toshiba toshiba corporation 12 discrete semiconductors 2sa2 transistor silicon pnp epitaxial type pct process for general purpose switching and ampli. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. Jmnic product specification silicon npn power transistors 2sc3281 description with to3pl package complement to type 2sa2 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 base collector. Storage temperature vcbo vceo vebo ic pc tj tstg 200 200 6 15 150 15055150 v v v a w c c electrical characteristics ta25cccc characterristic symbol test condition min typ max unit collector base breakdown voltage collector emitter breakdown voltage emitter base breakdown voltage collector cutoff current emitter cutoff current dc. Maxunit v brceo collectoremitter breakdown voltage i c 50ma. Trans pnp 200v 15a 221f1a online from elcodis, view and download 2sa2o pdf datasheet, transistors bjt single specifications. Range of storage temperature 1 pw10ms, single pulse. Recommended for 100w high fidelity audio datasheet search, datasheets, datasheet search site for electronic components and.
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